DDR3

TIM · ตอบ: Wed Jan 20, 2010 2:17 pm ชื่อกระทู้: DDR3

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DDR3 (DDR-3)

DDR-3, the third-generation of DDR SDRAM technology, makes further improvements in bandwidth and power consumption. Manufacturers of DDR-3 started with 90 nm fabrication technology and are moving toward 70 nm as production volumes increase. DDR-3 operates at clock rates from 400 MHz to 800 MHz with theoretical peak bandwidths ranging from 6.40 GB/s to 12.8 GB/s. DDR-3 DIMMs can reduce power consumption by up to 30 percent compared to DDR-2 DIMMs operating at the same speed. DDR-3 DIMMs use the same 240-pin connector as DDR2 DIMMs, but the notch key is in a different position (Figure 14).

To increase performance and reduce power consumption of DDR-3, designers made several key enhancements:

- An 8-bit prefetch buffer stores more data before it is needed than the 4-bit buffer for DDR2 does.

- Fly-by topology (for the commands, addresses, control signals, and clocks) improves signal integrity by reducing the number of stubs and their length. This feature requires the controller to support “write leveling” on DDR-3 DIMMs.

- 1.5-V signaling reduces power consumption even further than 1.8 V signaling for DDR-2. -

- A thermal sensor integrated on the DIMM module signals the chipset to throttle memory traffic to the DIMM if DIMM temperature exceeds a programmable critical trip point.

Information porvided by Hewlett-Packard Development Company, L.P.